E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
K.N. Tu
Materials Science and Engineering: A