Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
The effect of growth temperature and substitutional carbon on phosphorus autodoping in Si grown by low pressure rapid thermal chemical vapor deposition was investigated. In the temperature range between 550 and 700°C, phosphorus autodoping decreased with decreasing temperature. The incorporation of substitutional carbon at 550°C further suppressed autodoping. Using a combination of 550°C growth and substitutional carbon incorporation, we achieved abrupt phosphorus transitions over three decades of phosphorus concentration. These transitions were characterized by a slope of 11 ± 1.5 nm/decade. © 2003 The Electrochemical Society. All rights reserved.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989