A novel concept for field-effect transistors - The tunneling carbon nanotube FET

Abstract

We present experimental and simulation results on a novel concept for a nanowire-field-effect transistor (NW-FET) based upon band-to-band tunneling. In contrast to a conventonal FET, the NW-FET enables in principle extremely small subthreshold swings and is insensitive to changes of temperature. © 2005 IEEE.