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A model for the atomic layer epitaxy of GaAs
Abstract
A simple model for the self-limiting Ga deposition by trimethylgallium in the atomic layer epitaxy of GaAs is proposed. The model features both the site blocking of adsorbed CH3 groups on the surface and the surface-stoichiometry-dependent desorption of CH3Ga. It successfully reproduces both the self-limiting Ga deposition at temperatures below a critical temperature and its failure at higher temperatures. © 1993.
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