About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
A model for the atomic layer epitaxy of GaAs
Abstract
A simple model for the self-limiting Ga deposition by trimethylgallium in the atomic layer epitaxy of GaAs is proposed. The model features both the site blocking of adsorbed CH3 groups on the surface and the surface-stoichiometry-dependent desorption of CH3Ga. It successfully reproduces both the self-limiting Ga deposition at temperatures below a critical temperature and its failure at higher temperatures. © 1993.