Stas Polonsky, Keith A. Jenkins, et al.
IEEE ITC 2004
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Stas Polonsky, Keith A. Jenkins, et al.
IEEE ITC 2004
Joachim N. Burghartz, Michael Hargrove, et al.
IEEE Transactions on Electron Devices
C. Zhou, Keith A. Jenkins, et al.
IRPS 2018
Keith A. Jenkins
IEEE Design and Test of Computers