Keith A. Jenkins, David F. Heidel
Microelectronic Engineering
A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBe/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.
Keith A. Jenkins, David F. Heidel
Microelectronic Engineering
Pong-Fei Lu, Keith A. Jenkins
IRPS 2013
Ph. Avouris, Yu-Ming Lin, et al.
IEDM 2010
Dinkar V. Singh, Keith A. Jenkins, et al.
IEEE TNANO