Publication
RFIC 2015
Conference paper

A 17.8 dBm 110-130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology

View publication

Abstract

A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 250/330 GHz 0.12 μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.8 dBm at 115 GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with -2 dBm input power at V-Band and consumes a total DC power of 600 mW. The PA achieves output 1 dB compression point and saturated power of 13.5 and 17.6 dBm, respectively, at 120 GHz and peak small signal gain of 32 dB.

Date

25 Nov 2015

Publication

RFIC 2015

Authors

Share