A 14 dBm 110-130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology

Abstract

A D-Band x2 frequency multiplier- A mplifier chain implemented in an advanced 90 nm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 14 dBm and consists of input balun and push-push frequency doubler which drives a single-ended three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with 5 dBm input power at V-Band and consumes a total DC power of 200 mW from a 1.6 V supply. The stand- A lone doubler achieves output power >5 dBm at 110-130 GHz and occupies area of only 0.15 mm2.