Conference paper
96 GHz static frequency divider in SiGe bipolar technology
Alexander Rylyakov, Thomas Zwick
GaAs IC 2003
A static frequency divider designed in a 210-GHz fT, 0.13-μm SiGe bipolar technology is reported. At a -5.5-V power supply, the circuit consumes 44 mA per latch (140 mA total for the chip, with input-output stages). With single-ended sine wave clock input, the divider is operational from 7.5 to 91.6 GHz. Differential clocking under the same conditions extends the frequency range to 96.6 GHz. At -5.0 V and 100 mA total current (28 mA per latch), the divider operates from 2 to 85.2 GHz (single-ended sine wave input).
Alexander Rylyakov, Thomas Zwick
GaAs IC 2003
Alexander Rylyakov, Jose Tierno, et al.
CICC 2008
Ekaterina Laskin, Alexander Rylyakov
CSICS 2008
Behnam Analui, Alexander Rylyakov, et al.
IEEE Journal of Solid-State Circuits