Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Current noise measurements on Si inversion layers in the region of the Na impurity band at 4.2K are presented. The measurements show that the observed 1/f noise is an intrinsic property of the hopping conduction and is not due to charge trapping as usually assumed. Na-related structure in the noise magnitude suggests that percolation effects can be important to hopping conduction.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters