About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
1/f noise and percolation in impurity bands in inversion layers
Abstract
Current noise measurements on Si inversion layers in the region of the Na impurity band at 4.2K are presented. The measurements show that the observed 1/f noise is an intrinsic property of the hopping conduction and is not due to charge trapping as usually assumed. Na-related structure in the noise magnitude suggests that percolation effects can be important to hopping conduction.