Wenjie Li, P. Rao Varanasi, et al.
Proceedings of SPIE - The International Society for Optical Engineering
A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2. Copyright © 1994 John Wiley & Sons, Ltd.
Wenjie Li, P. Rao Varanasi, et al.
Proceedings of SPIE - The International Society for Optical Engineering
Robert D. Allen, Young-Hye Na, et al.
J. Photopolym. Sci. Tech.
Anthony J. Pasquale, Robert Karro, et al.
American Chemical Society, Polymer Preprints, Division of Polymer Chemistry
Frances A. Houle, Ann Fornof, et al.
SPIE Advanced Lithography 2007