About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon
Abstract
100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s -1 with a doping concentration of 6×10 15 cm-3 has been achieved.