Publication
Microelectronic Engineering
Paper

Study of vertical transport through Schottky-gated, laterally confined quantum-dot devices

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Abstract

We present the conductance properties of resonant tunneling heterostructures, laterally confined by a Schottky gate so that the confinement can be varied in a continuous and controlled way. Data on dots with nominal diameters in the submicron range are reported. © 1991.

Date

01 Jan 1991

Publication

Microelectronic Engineering

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