Publication
IEEE Electron Device Letters
Paper

Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter

Abstract

Detailed simulations of the collector current in a vertical poly-emitter p-n-p transistor have been carried out to verify the minority-hole mobility model of S.E. Swirhun et al (1986). The simulations were based on the SIMS profile, incorporating all published physical parameters, and the results showed good agreement with the measurements for base doping ranging from 1018 to 1019 cm-3. In addition, the effective surface recombination velocity of electrons at the p+ poly/Si interface was found by fitting the measured base current to be ~1.4 × 105cm/s, which is comparable to its n-p-n counterpart.

Date

01 Jan 1992

Publication

IEEE Electron Device Letters

Authors

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