Publication
CLEO_SI 2018
Conference paper

Gallium phosphide microresonator frequency combs

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Abstract

We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity ( > 10-18 m2/W) yields a 10-mW parametric threshold and 100-nm-wide combs with THz spacing, centered at 1550 nm.

Date

13 May 2018

Publication

CLEO_SI 2018

Authors

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